The chemical stability of 10% SF6-90% N2
mixtures (100 kPa pressure) has been studied under sparking in the presence
or absence of an organic insulator (teflon, kel'F, polyethylene,
polypropylene, nylon, megelit), and/or added impurities (0.2% O2
or H2O). The study was carried out experimentally and
numerically.
The production rates of the main decomposition products of SF6:
(SF4 + SOF2), S2F10, etc, and of
products containing nitrogen, NF3, N2O, were
evaluated. The results from the model led to trends similar to those
observed experimentally concerning the effects on gas phase composition,
of the presence of atoms such as O, H, C, etc, from the vaporized insulator
and/or the added impurities.
A comparison of the chemical stability of the SF6-N2
mixture with that of pure SF6 has also been made. The results can
be summarized as follows:
in all cases, the major byproducts formed were (SF4 + SOF2) and S2F10;
the use of the SF6-N2 mixture instead of SF6 led to the decreased formation of degradation products;
vaporization of an organic insulator caused an increase in the
production of degradation products which was less intense for the mixture
than for pure SF6;
the study carried out with nitrogen-diluted SF6 showed the
importance of foreign atoms (C, H, O, etc) on the proportion of SF6 that is not regenerated. Owing to their tendency to trap fluorine
atoms, the impurity atoms prevent SF6 from recombining and can
thus lead to the deterioration of the dielectric qualities of the gas
mixture.