Self-assembly surface modified indium–tin oxide anodes for single-layer light-emitting diodes

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Published 14 February 2003 • Published under licence by IOP Publishing Ltd
, , Citation Jorge Morgado et al 2003 J. Phys. D: Appl. Phys. 36 434 DOI 10.1088/0022-3727/36/5/304

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1 Instituto de Telecomunicações and Departamento de Engenharia Química, Instituto Superior Técnico, Avenida Rovisco Pais, P-1049-001 Lisboa, Portugal

2 Departamento de Química, Instituto Tecnológico e Nuclear, P-2686-953 Sacavém, Portugal

3 Departamento de Engenharia Química, Instituto Superior de Engenharia de Lisboa, Rua Conselheiro Emídio Navarro-1, P-1949-001 Lisboa, Portugal

4 Department of Physics and Astronomy, University College London, Gower Street, London, WC1E 6BT, UK

Dates

  1. Received 4 October 2002
  2. Published

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0022-3727/36/5/434

Abstract

We study the effect of indium–tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium–tin oxide.

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10.1088/0022-3727/36/5/304