The effects of Mn doping on the ferroelectric properties of Pb(Zr0.3Ti0.7)O3 (PZT) thin films on Pt/Ti/SiO2/Si substrates have been investigated. The composition of the PZT and Mn doping level are Pb(Zr0.3Ti0.7)1−xMnxO3 (x = 0,0.2,0.5,1,2,4 mol%). The PZT thin films doped with a small amount of Mn2+ (x ⩽ 1) showed almost no hysteretic fatigue up to 1010 switching bipolar pulse cycles, coupled with excellent retention properties. However, excessive additions of manganese made the fatigue behaviour worse. We propose that the addition of small amounts of Mn is able to reduce the oxygen vacancy concentration due to the combination of Mn2+ and oxygen vacancies in PZT films, forming Mn4+ ions. The interfacial layer between the Pt electrode and PZT films and Mn-doped PZT (x = 4) was detected by measuring the dielectric constant of thin films of different thickness. However, this interfacial layer was not detected in Mn-doped PZT (x = 1). These observations support the concept of the preferential electromigration of oxygen vacancies into sites in planes parallel to the electrodes, which is probably responsible for the hysteretic fatigue.