The methods of protecting and etching surface areas to obtain lateral pattern dimensions of <0.5 mu m to >50 mu m are reviewed. Protection materials, resists, which can be selectively dissolved, i.e. developed, after exposure to UV, electron beam, X-ray or ionic radiation are considered. The techniques available for etching the unprotected surface areas, i.e. liquid chemicals, physical bombardment methods (RF sputtering, ion beams) and recent plasma etching processes are compared.