Table of contents

Volume 44

Number 12, December 1981

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REVIEWS

1251

Non-radiative transitions affect many aspects of semiconductor performance. Normally they reduce device efficiency by suppressing luminescence, creating defects, reducing carrier lifetimes, or enhancing diffusion during operation. The present review surveys both the theoretical and practical understanding of non-radiative transitions. It includes general theoretical results and the associated ideas, with the emphasis on phonon-induced and defect Auger processes. Most of the purely formal aspects are omitted, but the points of principle where uncertainties remain are discussed. The review also covers the relation between basic theoretical studies and practical applied work on device degradation. This includes a description of the atomic processes involved in the more important mechanism of device deterioration and the theoretical understanding of the mechanism of these underlying processes. Finally, there is a survey of models proposed for 'killer' centres.

1297

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Under suitable circumstances imperfections in semiconductors can bind electrons (holes) with a binding energy small compared to the intrinsic energy gap of the host; the wavefunctions characterising the energy levels of the imperfection are extended over many lattice spacings. This review discusses the electronic energy levels of chemical impurities in the classic group IV elemental and the III-V and II-VI compound semiconductors. The large dielectric constant of the host, the anisotropic effective mass tensor and/or the small effective mass of the charge carrier are the factors which play a significant role in the description of the electronic energy levels; they can be viewed as scaled-down versions of the hydrogen atom with bound states having binding energies orders of magnitude smaller than those of the hydrogen atom. The authors present the experimental results on the spectroscopy of donors and acceptors in semiconductors together with the theory necessary for their interpretation. They discuss the experimental results and the theory of the bound states of impurities in the context of the symmetry and the effective-mass parameters of the band extrema with which they are associated. Effects of external perturbation-piezo- and magneto-spectroscopy-are presented both from experimental and theoretical points of view. The review concludes with the experimental observations on the linewidths of the excitation spectra of donors and acceptors in semiconductors and an analysis of the causes underlying them.