Table of contents

The contribution that the technique of ferromagnetic resonance (FMR) has made to the understanding of the magnetic behaviour of ultrathin single films is reviewed. Experimental methods to measure FMR in situ in ultrahigh vacuum are presented. The temperature dependence of the magnetization, of the magnetic relaxation rate in the vicinity of the Curie temperature, and of the second- and fourth-order magnetic anisotropy energy (MAE) constants can be measured by FMR in situ for magnetic monolayers. Using the cases of Ni/Cu(001) and Gd/W(110) as examples, the role of the MAE for the quantitative description of temperature- and thickness-dependent reorientation transitions of the magnetization is discussed. Initial results for the anisotropy of the g-factor which is related to the anisotropy of the orbital moment (and the MAE) are presented.

Beginning with some introductory remarks about aims and scope, historical background and present state of the art, a brief survey of the technique of sputter depth profiling is given. The fundamental principles of ion/solid interactions during sputtering and the resulting changes in surface composition and surface topography as well as their influence on the conversion of sputtering time to sputtered depth are illustrated by some examples. Together with the specific analysis method employed, such as secondary ion mass spectrometry or Auger electron spectroscopy, these effects determine the shape of the depth profile of interfaces and of thin layers. Recent developments in evaluation and quantification of depth profiles are reviewed with emphasis on the role of the depth resolution function in profile reconstruction, including experimental determination and theoretical modelling of the depth resolution function by the three fundamental parameters: atomic mixing, surface roughness and information depth (MRI model). A summary of optimized experimental conditions for high-resolution depth profiles highlights the use of sample rotation and of low-energy primary ions. Practical application of depth profiling at interfaces is further elucidated by typical examples in the fields of surface and grain boundary segregation, corrosion, oxidation and interdiffusion controlled reactions at thin-film interfaces in electronic materials. An outlook on future trends focuses on theoretical profile simulation methods and on instrumental developments.