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Vladimir N Vertoprakhov1, Lyubov' D Nikulina1 and Igor K Igumenov1
©, 2005 Russian Academy of Sciences and Turpion Ltd
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Citation Vladimir N Vertoprakhov et al 2005 Russ. Chem. Rev. 74 725
DOI 10.1070/RC2005v074n08ABEH000924
101 Total downloads
Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10–15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.
