Table of contents

The modern theoretical models of the active–passive transition and of the passive state of metals are surveyed. General regularities underlying the functioning mechanisms of passivating oxide layers as well as the adsorption and salt passivation are formulated.

Data on the chemical vapour deposition of thin-film dielectrics based on silicon nitride, silicon oxynitride and silicon dioxide and on phosphorus- and boron-containing silicate glasses are generalised. The equipment and layer deposition procedures are described. Attention is focussed on the analysis and discussion of the deposition kinetics and on the kinetic models for film growth. The film growth processes are characterised and data on the key physicochemical properties of thin-film covalent dielectric materials are given.

Data on the isolation of transactinide elements and their homologues and investigation of their chemical properties in solutions, which were obtained by chromatographic extraction and other methods, are generalised for the first time. Particular attention is given to model experiments on the prediction of the chemical properties and investigation of the relativistic effects of these elements on the basis of the behaviour of homologous elements in solutions containing various complexing ligands. The results and prospects for future research are discussed.

Data on the synthesis and properties of aza- and diazacrown compounds containing a phenyl group at a nitrogen atom or an o-phenylene fragment annelated to the macrocycle are generalised. The functional derivatives of these compounds and their heteroanalogues with O, S and N atoms are considered.