The general principles and the state of the art of picosecond optoelectronics are reviewed.
The physical phenomena underlying this field are discussed, including picosecond
photoconductivity of semiconductors, electrooptic effect in crystals, and propagation of
ultrashort electrical pulses in microwave transmission lines. A description is provided of the
components used in picosecond optoelectronics. Characteristics of the materials employed,
which influence the response time and sensitivity of specific devices, are considered. Much
attention is given to the methods of generation of ultrashort optical pulses by injection lasers. The
results are reported of experiments on picosecond photoconductors used as electromagnetic
energy sources (Hertz dipoles) and of studies of the electrooptic Vavilov–Cherenkov effect.
Descriptions are given of some applications of picosecond optoelectronic devices in physics
research, metrology, and ultrafast data processing systems.