CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

A Continuous Current Model of Accumulation Mode (Junctionless) Cylindrical Surrounding-Gate Nanowire MOSFETs

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2013 Chinese Physical Society and IOP Publishing Ltd
, , Citation Jin Xiao-Shi et al 2013 Chinese Phys. Lett. 30 038502 DOI 10.1088/0256-307X/30/3/038502

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1 School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110023

2 School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

3 School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Korea

Dates

  1. Received 8 August 2012
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0256-307X/30/3/038502

Abstract

A continuous current model of accumulation mode or so-called junctionless (JL) cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors (MOSFETs) is proposed. The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations. It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement. Without any empirical fitting parameters, the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.

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