This site uses cookies. By continuing to use this site you agree to our use of cookies. To find out more, see our Privacy and Cookies policy. Close this notification
Letter

Effect of ${\gamma}$ -ray irradiation on performance of LiNbO3-based piezoelectric vibration sensors

, , , , , , , and

Published 7 March 2022 Copyright © 2022 EPLA
, , Citation Huifen Wei et al 2021 EPL 136 67001 DOI 10.1209/0295-5075/ac39ef

0295-5075/136/6/67001

Abstract

LiNbO3 (LN)-based micro-electro-mechanical systems (MEMS) vibration sensors exhibit giant perspectives in extreme environments, where a great amount of irradiation exists. However, to the best of our knowledge, it is still unknown whether the irradiation affects the performance of LN-based piezoelectric MEMS sensors. Based on this consideration, it is necessary to model the irradiation environment to investigate the effect of high-dosage irradiation on LN-based vibration sensors. Firstly, the theoretical work is done to study the Compton effect on the gamma-ray irradiation with a 60Co source. After irradiation, X-ray diffraction (XRD) characterization is performed to verify the effect of irradiation on the crystalline of LN thin film. Meanwhile, the performances of output voltages on the five MEMS devices under various dosage of irradiation are compared. As a result, a neglected shift of 0.02 degrees is observed from the XRD image only under maximum irradiation dosage of 100 Mrad(Si). Moreover, the output voltages of cantilever beam vibration sensors decrease by 3.1%. Therefore, it is verified that the γ-ray irradiation has very little influence on the LN-based MEMS vibration sensors, which have great attraction on the materials and sensors under high-dose irradiation.

Export citation and abstract BibTeX RIS

Access this article

The computer you are using is not registered by an institution with a subscription to this article. Please choose one of the options below.

Login

IOPscience login

Find out more about journal subscriptions at your site.

Purchase from

Article Galaxy
CCC RightFind

Purchase this article from our trusted document delivery partners.

Make a recommendation

To gain access to this content, please complete the Recommendation Form and we will follow up with your librarian or Institution on your behalf.

For corporate researchers we can also follow up directly with your R&D manager, or the information management contact at your company. Institutional subscribers have access to the current volume, plus a 10-year back file (where available).

10.1209/0295-5075/ac39ef