Structural and binding properties of vacancy clusters in silicon

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1998 EDP Sciences
, , Citation A. Bongiorno et al 1998 EPL 43 695 DOI 10.1209/epl/i1998-00419-1

0295-5075/43/6/695

Abstract

By means of large-scale quantum simulations we investigate the formation and binding of vacancy clusters Vn in silicon for n ⩽ 35. We show that different growth patterns exist and that an interplay between energy and topology arguments determines the most stable aggregates.

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10.1209/epl/i1998-00419-1