Abstract
Photoluminescence originating from the GaAs/ (ordered) GaInP2 interface has been studied under the simultaneous application of high magnetic field and high pressure. A sharp threshold dependence on magnetic field was observed in the intensity of the spatially indirect transition between electrons in GaInP2 and holes in GaAs. A model involving trapping of electrons from GaAs into "quantum boxes" formed by type-II ordered GaInP2 domains is proposed. This model reproduces the pressure-induced variations of the quantum box sizes and demonstrates the ability of this technique to study the properties of nanometer size systems.