Oxygen diffusion in off–c-axis normal-state Bi2Sr2CaCu2O8 + δ films

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2000 EDP Sciences
, , Citation A. Gramm et al 2000 EPL 49 501 DOI 10.1209/epl/i2000-00177-6

0295-5075/49/4/501

Abstract

The anisotropy of the oxygen diffusion in the high-Tc-super con duc tor Bi2Sr2CaCu2O8 + δ was investigated using off–c-axis prepared thin films. High-quality oriented films with thickness 1000 Å and c-axis inclined by a tilt angle α with respect to the normal of the film surface were grown up to α = 15°. Oxygen diffusion following a small change of the ambient oxygen partial pressure in the temperature range 200 − 400 °C was monitored by in situ resistance measurements. Diffusion times according to an activated process τ−1 = τ0−1exp [ − E/kBT] were found, with E = 0.6 eV and τ0 = τ0(α) becoming smaller with increasing tilt angle. A comparison of the experimental τ0(α) with a calculation of τ0 for an ideal monocrystalline film suggests that as-grown films consist of crystalline grains with la te ral dimensions ∼ 1 μm.

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10.1209/epl/i2000-00177-6