[110] tunneling under applied magnetic fields into Y1Ba2Cu3O7 − δ: Possible evidence for a field-induced idxy gap component

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2000 EDP Sciences
, , Citation Y. Dagan et al 2000 EPL 51 116 DOI 10.1209/epl/i2000-00343-4

0295-5075/51/1/116

Abstract

Tunneling characteristics along the [110] direction were measured in Y1Ba2Cu3O7 − δ\Insulator\In junctions as a function of the magnetic field H, applied parallel to the plane of the junction, along the c-axis. The junctions exhibit a Zero Bias Conductance Peak (ZBCP) which splits as H1/2. The data is in better agreement with a field-induced idxy gap component than with a Doppler-shift–induced field splitting.

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10.1209/epl/i2000-00343-4