Interaction-induced transverse magnetoresistance with a temperature-dependent sign in a n-Si/SiGe structure

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Published 22 July 2005 2005 EDP Sciences
, , Citation E. B. Olshanetsky et al 2005 EPL 71 665 DOI 10.1209/epl/i2005-10123-2

0295-5075/71/4/665

Abstract

The work is devoted to interaction-induced magnetoresistance in a two-dimensional electron gas in a Si/SiGe heterostructure. Several types of magnetoresistance behavior are discussed including a magnetoresistance that changes sign with temperature. The data is analyzed using the recent theory of interaction-induced magnetoresistance for arbitrary transport regime and any type of disorder potential.

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10.1209/epl/i2005-10123-2