Study on the normal-state transport properties of La1.6 − xNd0.4SrxCuO4 films

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Published 3 November 2005 2005 EDP Sciences
, , Citation Y. Liu et al 2005 EPL 72 795 DOI 10.1209/epl/i2005-10315-8

0295-5075/72/5/795

Abstract

The normal-state transport properties of La1.6 − xNd0.4SrxCuO4 films (x = 0.08, 0.1, 0.12, 0.14, 0.16) have been discussed with a one-dimensional transport model proposed by Moshchalkov et al. The linear-T dependent resistivity ρab in the high-temperature regime is dominated by the charge diffusion in two dimensions, while the superlinear behavior of ρab upon cooling results from one-dimensional charge transport. With further decreasing temperature, a low-temperature logarithmic behavior is observed from underdoped to optimally doped samples. The mechanism of the localization is ascribed to the freezing of charges into the stripes. We emphasize that the pseudogap can be well understood within the charge stripe scenario.

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10.1209/epl/i2005-10315-8