Spin-polarized hole transport through a diluted magnetic semiconductor heterostructure with magnetic-field modulations

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Published 25 January 2006 2006 EDP Sciences
, , Citation K. Gnanasekar and K. Navaneethakrishnan 2006 EPL 73 786 DOI 10.1209/epl/i2005-10456-8

0295-5075/73/5/786

Abstract

We investigate the spin-polarized transport of holes in symmetric and asymmetric diluted magnetic semiconductor heterostructures of CdTe/Cd1 − xMnxTe under local magnetic-field modulations. The effect of a type-I–to–type-II transition in the CdTe/Cd1 − xMnxTe heterostructure is also used in our model. The spatially modulated magnetic field provides us with a new degree of freedom to control the degree of spin-polarized transport of holes. Our investigations show that spin-polarized transport of holes reaches 100% polarization with modulated weak magnetic field. This could be suitably engineered in the fabrication of perfect magnetic semiconductor spin-filters.

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10.1209/epl/i2005-10456-8