A simple approach to form Ge nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric by pulsed laser ablation

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Published 24 February 2006 2006 EDP Sciences
, , Citation C. L. Yuan et al 2006 EPL 74 177 DOI 10.1209/epl/i2005-10505-4

0295-5075/74/1/177

Abstract

We have successfully developed a novel method to fabricate the memory structure of Ge nanocrystals embedded in amorphous Lu2O3 high-k dielectric using pulsed laser ablation. The mean size and aerial density of the Ge nanocrystals are estimated to be about 9 nm and 7 × 1011 cm−2, respectively. Good performances in terms of large memory window and long data retention were observed. Our preparation method is simple, fast and economical.

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10.1209/epl/i2005-10505-4