Abstract
Periodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.
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