Abstract
The transport property of the La0.7Sr03MnO3/Si heterostructure was investigated theoretically by applying the drift-diffusion model to the present system. A simple scenario of the semiconductor band and electric field at the interface region of the heterostructure with various bias voltages are presented. The good agreement between the self-consistent calculated results and the experimental data indicates that the proposed band picture is valid for the interpretation of the transport property of the p-n heterojunctions made of La0.7Sr0.3MnO3 and Si regardless of the complexity of the interface structures and multi-couplings among charge, spin, lattice and orbital of manganites.