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Origin of the change of the electrical and optical properties in shocked Al2O3 and prediction of an increase in electrical conductivity in MgSiO3 at pressure-temperature conditions of the Earth's D'' layer

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Published 28 July 2008 Europhysics Letters Association
, , Citation L. He et al 2008 EPL 83 39001 DOI 10.1209/0295-5075/83/39001

0295-5075/83/3/39001

Abstract

Shock-wave experiments of Al2O3 indicated the onset of an increase in electrical conductivity and observed the optical transparency loss at ∼130 GPa. Here, based on first-principles calculations, we determine the pressure dependence of the band gap of perfect Al2O3 to 220 GPa, and investigate the optical absorption of Al2O3 without and with oxygen and aluminum vacancies within 220 GPa. Our results indicate that: 1) the onset of the conductivity increase is attributed to a band-gap decrease due to the Rh2O3(II)-CaIrO3 transition at ∼130 GPa and ∼1500 K; 2) this transition is not responsible for the transparency loss, but heterogeneous absorption in the visible-light region, induced by the +2 charge oxygen vacancy, should be a source of this phenomenon. The calculations of perfect MgSiO3, a material analogous to Al2O3, suggest that a perovskite to post-povskite transition in MgSiO3 at ∼125 GPa and ∼2500 K also yields a band-gap reduction. This causes an increase in electrical conductivity in MgSiO3 at pressure-temperature conditions of the Earth's D'' layer.

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10.1209/0295-5075/83/39001