Abstract
A method of THz radiation generation in semiconductors in crossed static magnetic and alternating electric fields is considered. It is based on the inversion of the transition between heavy- and light-hole sub-bands in the THz spectral range. This inversion is created due to cyclotron frequencies of heavy and light holes being different. Under sufficiently low hole density when the hole-hole energy exchange is less efficient than the hole-lattice one, this fact leads to a situation when the resonant with heavy holes pump alternating electric field heats only the heavy-hole population thereby inverting the heavy-light holes transition in a narrow spectral range. The optimal parameters of such a scheme were found and it was shown that it can operate even at room temperature (in the pulsed mode).