Abstract
We present transport coefficients for electrons in mixtures of CF4 with Ar and O2 which are used in plasma etching, for ratios of the electric field to the gas number density E/N from 1 Td to 1000 Td (1Td=10−21 Vm2). We then add a certain percentage of radicals produced by dissociation of CF4. Our analysis of non-conservative collisions revealed a range of E/N where electron attachment introduced by radicals significantly changes the electron kinetics obtained for mixtures without dissociation of the CF4 gas. Results are obtained by using a simple, two-term solution for Boltzmann's equation and by Monte Carlo simulations.
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