Graphene transport at high carrier densities using a polymer electrolyte gate

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Published 20 October 2010 • Europhysics Letters Association
, , Citation A. Pachoud et al 2010 EPL 92 27001 DOI 10.1209/0295-5075/92/27001

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Author affiliations

1 Department of Physics, National University of Singapore - 2 Science Drive 3, Singapore 117542

2 NUS Graduate School for Integrative Sciences and Engineering (NGS) - Singapore 117456

3 Department of Chemistry, National University of Singapore - 3 Science Drive 3, Singapore 117543

4 Nanocore, National University of Singapore - 4 Engineering Drive 3, Singapore 117576

5 M. Jaiswal and A. Pachoud are equal contributors to this work.

Dates

  1. Received 16 September 2010
  2. Accepted 30 September 2010
  3. Published
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0295-5075/92/2/27001

Abstract

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6×1013/cm2 are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2×1013/cm2), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3×1013/cm2, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically enhanced scattering rate.

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Accepted by A. H. Castro Neto

10.1209/0295-5075/92/27001