Perturbed angular correlation (PAC) and ion channelling techniques were used to study the trapping of vacancies by In atoms in a Cu-0.13 at.% In crystal after H+ irradiation. Four major defect complexes were observed; the fractions f1, f2, f7 and fT of In atoms which were associated with these complexes were measured as a function of annealing temperature and irradiation fluence. The complexes f1, f2 and f7 were observed only by the PAC technique; the coupling constants for these defects were vQ1=116 MHz, vQ2=181 MHz and vQ7=106 MHz, all having eta =0. The first two of these had previously been shown to be due to trapping of one and two vacancies. The third may be due to He trapping. A tetrahedral complex fT, consisting of an In atom in the tetrahedral interstitial site surrounded by four nearest-neighbour vacancies was observed by channelling but was invisible by the PAC method. Complexes, f1, f2, and fT were formed during annealing from 180-250K. The fractions f1 and f2 decreased strongly during annealing from 250-230K, while the tetrahedral complex was stable up to approximately 500K. The complex f7 appeared during annealing above 320K and continued to increase up to 600K. The fractions f1, f2 and fT were all reduced during 70K irradiations by the absorption of self-interstitial Cu atoms.