An experimental method of preparing specimens of N1O in the form of coherent strips is described. Simultaneous measurements of electrical conductivity σ and Hall effect R are then made at various temperatures up to about 700° c. and the thermo-electric power dE/dT measured immediately afterwards, all on one sample. The experiments are then repeated on different samples, and they show that log σ, log R, and dE/dT are linear functions of 1/T, where T is the mean absolute temperature of the specimen. The graphs for log σ and log|R| against 1/T each consist of two rectilinear portions, one covering the high, the other the low temperature results. Thermo-electric measurements yielded results only for the high temperature part.
The theory of impurity semiconductors is developed and found adequate to explain the variation, at any rate at higher temperatures. It is found that an activation energy of about 2 ev. at high temperatures, and from 0.3 to 0.64 ev. at low temperatures, is required for excitation of electrons to the conduction band. The concentration of impurity centres operative in the high temperature range is about 8.6 × 1020, the electrons having a mean free path of about 10-6 cm. The concentration of free "carriers" varies from 1011 to 1013 as the temperature rises. NiO behaves like a defect semiconductor, "hole" conduction predominating. The significance of these results is discussed.