The Lorenz number of the semiconductor Bi2Te3 has been evaluated, for the range of partial degeneracy, from data provided by the measurements of electrical conductivity and thermoelectric power. The calculated electronic component of the thermal conductivity, for p-type material, has been found to agree with the experimental results, assuming the lattice thermal conductivity to be independent of the electrical conductivity. Agreement has also been obtained for non-halogen-doped n-type Bi2Te3, but not for halogen-doped material. It has been shown that the reason for this is the high effective scattering cross section, for phonons, of the halogen atoms.
The theory of the transport of ionization energy has been found to agree very closely with experiment.