The properties of materials (mechanical, electronic, magnetic, etc) derive
ultimately from the identity and spatial arrangement of their constituents.
Nowadays, with the dimensions of technological devices and nanostructures
reaching a few atomic constants, descriptions in terms of macroscopic concepts
appear to be frequently inadequate and must give way to atomistic formulations
based on elementary processes. Focusing on metallic materials, and more
specifically on low-dimensional systems such as ultrathin films, superlattices or
nanostructures, this paper reviews the atomic scale phenomena responsible
for the most common types of defects (interfacial alloying, etching and
roughness, formation of dislocations and pinholes, film discontinuities and
twinning). It is shown that many of these features are related to the different
mechanisms of strain relaxation in heteroepitaxial systems as well as to specific
characteristics of atomic diffusion, such as the presence of Ehrlich–Schwoebel
barriers hindering step crossings. Some special growth techniques (use of
surfactants and codeposition) are also presented together with experimental
examples demonstrating their usefulness to overcome the elements' natural
limitations and produce accurately controlled, custom-designed epitaxial
samples. Finally, a brief overview is given of different phenomena that
can be exploited to produce self-assembled or self-organized structures.