C60 molecules were chemically coupled on porous silicon by means of a
kind of silane coupling agent, (CH3O)3Si(CH2)3NH2. After annealing
in N2 at 900oC, three photoluminescence (PL) peaks were observed, at
384, 440, and 465 nm, under an excitation with the 310 nm line of a Xe
lamp. The 440 and 465 nm PL peaks were attributed to optical transitions
in hydrogenated amorphous silicon carbide (a-Si1−xCx:H).
Upon excitation at 345 nm, three PL peaks appear, at 384, 400,
and 480 nm. Spectral analyses suggest that radiative recombination
of carriers occurs in the states at the surface of the β-SiC
nanocrystal formed during annealing, whereas their photogeneration takes place in the
β-SiC
core. After further annealing at 1100oC, two new PL peaks were
observed, at 417 and 436 nm. Spectral examinations reveal that the
two blue PL peaks arise from excess Si defect centres at the β-SiC
surface, while the photoexcited carriers still come from the β-SiC
core. Our experiments and results provide a good understanding of light-emitting
mechanisms related to SiC materials.