LETTER TO THE EDITOR

Optically driven silicon-based quantum gates with potential for high-temperature operation

, and

Published 27 June 2003 Published under licence by IOP Publishing Ltd
, , Citation A M Stoneham et al 2003 J. Phys.: Condens. Matter 15 L447 DOI 10.1088/0953-8984/15/27/102

0953-8984/15/27/L447

Abstract

We propose a new approach to constructing gates for quantum information processing, exploiting the properties of impurities in silicon. Quantum information, embodied in electron spins bound to deep donors, is coupled via optically induced electronic excitation. Gates are manipulated by magnetic fields and optical light pulses; individual gates are addressed by exploiting spatial and spectroscopic selectivity. Such quantum gates do not rely on small energy scales for operation, so might function at or near room temperature. We show the scheme can produce the classes of gates necessary to construct a universal quantum computer.

Export citation and abstract BibTeX RIS

Please wait… references are loading.
10.1088/0953-8984/15/27/102