The objective of this article is to review, in relation to photovoltaic applications, the
current status of crystalline silicon ribbon technologies as an alternative to technologies
based on wafers originating from ingots. Increased wafer demand, the foreseeable silicon
feedstock shortage, and the need for a substantial module cost reduction are the main
issues that must be faced in the booming photovoltaic market. Ribbon technologies
make excellent use of silicon, as wafers are crystallized directly from the melt
at the desired thickness and no kerf losses occur. Therefore, they offer a high
potential for significantly reducing photovoltaic electricity costs as compared
to technology based on wafers cut from ingots. However, the defect structure
present in the ribbon silicon wafers can limit material quality and cell efficiency.
We will review the most successful of the ribbon techniques already used in large scale
production or currently in the pilot demonstration phase, with special emphasis on the
defects incorporated during crystal growth. Because of the inhomogeneous distribution of
defects, mapped characterization techniques have to be applied. Al and P gettering studies
give an insight into the complex interaction of defects in the multicrystalline materials as
the gettering efficiency is influenced by the state of the chemical bonding of the metal
atoms. The most important technique for improvement of carrier lifetimes is hydrogenation,
whose kinetics are strongly influenced by oxygen and carbon concentrations present in
the material. The best cell efficiencies for laboratory-type (17%–18%; cell area:
4 cm2) as well as industrial-type (15%–16%; cell area:
) ribbon silicon solar cells are in the same range as for standard wafers cut from ingots. A
substantial cost reduction therefore seems achievable, although the most promising
techniques need to be improved.