Sb1−x(SiO2)x
granular films were prepared by the co-sputtering method with the volume fraction of
SiO2,
x, ranging from 0 (i.e. pure Sb) to about 30%. Systematic electronic transport
studies, including resistivity, magnetoresistance, Hall effect and Seebeck effect,
were carried out against the temperature, magnetic field and volume fraction
x of
SiO2. With the gradual
increase of the SiO2
content, the mean grain size of the Sb decreases, and eventually the film becomes
amorphous, as illustrated by the changes of the x-ray diffraction patterns. The temperature
coefficient of resistivity also changes its sign from positive to negative, indicating a
semimetal–semiconductor or insulator transition. Magnetoresistance studies using the weak
localization theory revealed that the electron dephasing time follows approximately a
T−2
law. This behaviour indicates that the electron–phonon (e–ph) scattering still dominates
the electron dephasing processes in these granular systems with a fair number of
SiO2
inclusions. The Hall coefficient decreases monotonically with temperature and with the volume fraction
of SiO2.
The giant Hall effect is absent in these granular films. Finally, an interesting but rather complicated
behaviour of the Seebeck coefficient versus temperature was observed when the volume content of
the SiO2
exceeded 18%.