We investigate the influence of an external voltage
V0 on
conductance G
through a quantum dot (QD), which is side-coupled to a quantum wire of length
LW, whose two ends are weakly connected to leads. In our calculation, the poor
man's scaling law and slave-boson mean-field method are employed. With
V0
increased, a series of resonant regions is formed and
G
exhibits different properties in and out of these regions, which is the universal
result of the finite-size effect on the Kondo correlation. In symmetric structures,
the would-be resonant regions corresponding to odd wavefunctions are removed.
If the symmetry is broken by changing the QD position, those regions will
be recovered. In two asymmetric structures with their wire lengths being
LW
and LW+1, respectively, the two sets of resonant regions intersect with each other. These
symmetry-related phenomena characterize side-coupled QD structures. With the barrier
width increased, the number of resonant regions is increased, too.