LETTER TO THE EDITOR

Tailoring materials for quantum wells: band offsets at (001)-oriented GaAs/(AlAs)n(GaAs)m interfaces

, , and

Published under licence by IOP Publishing Ltd
, , Citation K Karlsson et al 1990 J. Phys.: Condens. Matter 2 5265 DOI 10.1088/0953-8984/2/23/018

0953-8984/2/23/5265

Abstract

The electronic structure at the interface between bulk GaAs(001) and short-period superlattices of (AlAs)n(GaAs)m has been calculated using ab initio pseudopotential techniques. The results show that the valence band offsets at such interfaces are very similar to those obtained experimentally for random alloy systems, but superior transport properties are anticipated for the ordered systems.

Export citation and abstract BibTeX RIS

Please wait… references are loading.
10.1088/0953-8984/2/23/018