A method for calculating stress/strain distributions in structures containing one or more strained layers is presented. The theory, which is based on that presented by Treacy et al. (1985) is applied to the mesa laser structure containing either a single 3.5 nm strained layer or four evenly spaced 3.5 nm strained layers of In0.7Ga0.3As grown on InGaAsP (lattice matched to InP). The theory includes the anisotropy of elastic constants in full. Cases of structures containing four strained layers are examined where the separation between the centre of the layers is 7.0 nm, 10.0 nm and 16.5 nm. The maximum shear strain in the case of the single layer is found to occur at the layer/barrier interface, close to the edge of the sample. This is, therefore, the region where dislocations are likely to nucleate. The shear strain is about 1.3% for the mesa structure which has a mismatch of 0.009. The presence of four closely spaced strained layers does not significantly affect the magnitude of the shear strain in the region of its maximum. Both the in-plane and perpendicular components of the strain, epsilon yy and epsilon xx respectively, show relaxation at the edge of the structure with the largest relaxation occurring close to, but not at, the edge.