For 30 diamond- and zincblende-structure semiconductors, the bond length d, bond polarity alpha p, bulk modulus B, elastic shear constants (c11-c12)/2 and c44, bond-stretching force constant alpha , bond-bending force constant beta , internal displacement parameter zeta , effective atomic charge Z*, transfer parameter beta *, transverse charge eT*, and piezoelectric charge ep* are calculated from bond orbital calculations based on the tight-binding method. The results are compared with previous theoretical calculations and experiments.