Microscopic and optical investigation ofGe nanoislands on silicon substrates

Z F Krasil'nik; P Lytvyn; D N Lobanov; N Mestres; A V Novikov; J Pascual; M Ya Valakh; V A Yukhymchuk

doi:10.1088/0957-4484/13/1/318

Nanotechnology

Microscopic and optical investigation of Ge nanoislands on silicon substrates

Z F Krasil'nik¹, P Lytvyn², D N Lobanov¹, N Mestres³, A V Novikov¹, J Pascual⁴, M Ya Valakh² and V A Yukhymchuk²

Published 18 January 2002 • Published under licence by IOP Publishing Ltd
Nanotechnology, Volume 13, Number 1 Citation Z F Krasil'nik et al 2002 Nanotechnology 13 81 DOI 10.1088/0957-4484/13/1/318

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Author affiliations

¹ Institute of Microstructure Physics, RAS, 603600 Nizhny Novgorod, GSP-105, Russia

² Institute of Semiconductor Physics, NASU, 03028 Kyiv, Ukraine

³ Institut de Ciència de Materials de Barcelona, CSIC, 08193 Bellaterra, Spain

⁴ Departament de Física, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

Dates

Received 11 May 2001
Published 18 January 2002

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Abstract

We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.

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