ZnO, MgO, and GeO2
nanowires were successfully synthesized by simply heating the desired metal powder
to a temperature above its melting point in a flow of mixed gases (20% O2,
80% Ar, with the total flow rate of 120 sccm). Transmission electron microscopy
observations show that as-synthesized products are exclusively nanowires,
structurally uniform and single crystalline. The same technique was used to
fabricate arrays of ZnO nanowires on silicon substrates, which would be of
particular interest for direct integration in the current silicon-technology-based
optoelectronic devices. Based on our experimental results, a metal self-catalytic
growth mechanism was proposed and described conceptually. Because of the
absence of impurities such as transition metal or noble metal throughout the
whole growth process, the intrinsic properties of the resulting metal oxide
nanowires could be expressed and utilized. And with in-depth understanding of
the growth mechanism, our method could be efficient and controllable in
extension to many other low-melting-point metals, such as Al, In, and Sn, for the
synthesis of corresponding metal oxide nanostructures.