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Is it possible to operate a computing device with zero energy expenditure? This question, once considered just an academic dilemma, has recently become strategic for the future of information and communication technology. In fact, in the last forty years the semiconductor industry has been driven by its ability to scale down the size of the complementary metal-oxide semiconductor-field-effect transistor, the building block of present computing devices, and to increase computing capability density up to a point where the power dissipated in heat during computation has become a serious limitation. To overcome such a limitation, since 2004 the Nanoelectronics Research Initiative has launched a grand challenge to address the fundamental limits of the physics of switches. In Europe, the European Commission has recently funded a set of projects with the aim of minimizing the energy consumption of computing. In this article we briefly review state-of-the-art zero-power computing, with special attention paid to the aspects of energy dissipation at the micro- and nanoscales.

Detection of circulating tumor cells (CTCs) in the early stages of cancer is a great challenge because of their exceedingly small concentration. There are only a few approaches sensitive enough to differentiate tumor cells from the plethora of other cells in a sample like blood. In order to detect CTCs, several antibodies and aptamers have already shown high affinity. Nanotexture can be used to mimic basement membrane to further enhance this affinity. This article reports an approach to fabricate nanotextured polydimethylsiloxane (PDMS) substrates using micro reactive ion etching (micro-RIE). Three recipes were used to prepare nanotextured PDMS using oxygen and carbon tetrafluoride. Micro-RIE provided better control on surface properties. Nanotexturing improved the affinity of PDMS surfaces to capture cancer cells using surface immobilized aptamers against cell membrane overexpressed with epidermal growth factor receptors. In all cases, nanotexture of PDMS increased the effective surface area by creating nanoscale roughness on the surface. Nanotexture also enhanced the growth rate of cultured cells compared to plain surfaces. A comparison among the three nanotextured surfaces demonstrated an almost linear relationship between the surface roughness and density of captured tumor cells. The nanotextured PDMS mimicked biophysical environments for cells to grow faster. This can have many implications in microfluidic platforms used for cell handling.

We show theoretically that networks of membrane memcapacitive systems—capacitors with memory made out of membrane materials—can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closely reproduces one of the main features of the brain. A practical realization of these membrane memcapacitive systems, using, e.g., graphene or other 2D materials, would be a step forward towards a solid-state realization of memcomputing with passive devices.

We investigate the optical properties of ordered Ge quantum dots (QDs) by means of micro-photoluminescence spectroscopy (PL). These were grown on pit-patterned Si(001) substrates with a wide range of pit-periods and thus inter QD-distances (425–3400 nm). By exploiting almost arbitrary inter-QD distances achievable in this way we are able to choose the number of QDs that contribute to the PL emission in a range between 70 and less than three QDs. This well-defined system allows us to clarify, by PL-investigation, several points which are important for the understanding of the formation and optical properties of ordered QDs. We directly trace and quantify the amount of Ge transferred from the surrounding wetting layer (WL) to the QDs in the pits. Moreover, by exploiting different pit-shapes, we reveal the role of strain-induced activation energy barriers that have to be overcome for charge carriers generated outside the dots. These need to diffuse between the energy minimum of the WL in and between the pits, and the one in the QDs. In addition, we demonstrate that the WL in the pits is already severely intermixed with Si before upright QDs nucleate, which further enhances intermixing of ordered QDs as compared to QDs grown on planar substrates. Furthermore, we quantitatively determine the amount of Ge transferred by surface diffusion through the border region between planar and patterned substrate. This is important for the growth of ordered islands on patterned fields of finite size. We highlight that the Ge WL-facets in the pits act as PL emission centres, similar to upright QDs.

Investigations of geometric frustrations in magnetic antidot lattices have led to the observation of interesting phenomena like spin-ice and magnetic monopoles. By using highly focused magneto-optical Kerr effect measurements and x-ray microscopy with magnetic contrast we deduce that geometrical frustration in these nanostructured thin film systems also leads to an out-of-plane magnetization from a purely in-plane applied magnetic field. For certain orientations of the antidot lattice, formation of perpendicular magnetic domains has been found with a size of several μm that may be used for an in-plane/out-of-plane transducer.

We report the design, fabrication, and characterization of planar arrays of externally-fed silicon electrospinning emitters for high-throughput generation of polymer nanofibers. Arrays with as many as 225 emitters and with emitter density as large as 100 emitters cm⁻² were characterized using a solution of dissolved PEO in water and ethanol. Devices with emitter density as high as 25 emitters cm⁻² deposit uniform imprints comprising fibers with diameters on the order of a few hundred nanometers. Mass flux rates as high as 417 g hr⁻¹ m⁻² were measured, i.e., four times the reported production rate of the leading commercial free-surface electrospinning sources. Throughput increases with increasing array size at constant emitter density, suggesting the design can be scaled up with no loss of productivity. Devices with emitter density equal to 100 emitters cm⁻² fail to generate fibers but uniformly generate electrosprayed droplets. For the arrays tested, the largest measured mass flux resulted from arrays with larger emitter separation operating at larger bias voltages, indicating the strong influence of electrical field enhancement on the performance of the devices. Incorporation of a ground electrode surrounding the array tips helps equalize the emitter field enhancement across the array as well as control the spread of the imprints over larger distances.

Hybrid 2D hard-soft composites have been fabricated by combining soft (Co₇₃Si₂₇) and hard (NdCo₅) magnetic materials with in-plane and out-of-plane magnetic anisotropies, respectively. They have been microstructured in a square lattice of CoSi anti-dots with NdCo dots within the holes. The magnetic properties of the dots allow us to introduce a magnetostatic stray field that can be controlled in direction and sense by their last saturating magnetic field. The magnetostatic interactions between dot and anti-dot layers induce a completely tunable exchange bias-like shift in the system's hysteresis loops. Two different regimes for this shift are present depending on the lattice parameter of the microstructures. For large parameters, dipolar magnetostatic decay is observed, while for the smaller one, the interaction between the adjacent anti-dot's characteristic closure domain structures enhances the exchange bias-like effect as clarified by micromagnetic simulations.

The typical applications of electrochromic devices do not make use of the charge-dependent, gradual optical response due to their slow voltage-sensitive coloration. However, in this paper we present a design for a reusable, self-powered light dose indicator consisting of a solar cell and a gyroid-structured nickel oxide (NiO) electrochromic display that measures the cumulative charge per se, making use of the efficient voltage-sensitive coloration of gyroid materials. To circumvent the stability issues associated with the standard aqueous electrolyte that is typically accompanied by water splitting and gas evolution, we investigate a novel nano-gyroid NiO electrochromic device based on organic solvents of 1,1,1,3,3,3-hexafluoropropan-2-ol, and room temperature ionic liquid (RTIL) triethylsulfonium bis(trifluoromethylsulfonyl) imide ([SET3][TFSI]) containing lithium bis(trifluoromethylsulfonyl) imide. We show that an effective light dose indicator can be enabled by nano-gyroid NiO with RTIL; this proves to be a reliable device since it does not involve solvent degradation or gas generation.

Copper phthalocyanine (CuPc) nanostructure crystals, including nanoflower, nanoribbon, and nanowire, were controllably fabricated by temperature gradient physical vapor deposition (TG-PVD) through controlling the growth parameters. In a controllable growth system with carrier gas N₂, nanoflower, nanoribbon, and nanowire crystals were formed in a high-temperature zone, medium-temperature zone, and low-temperature zone, respectively. They were proved to be β-phase, coexist of α-phase and β-phase, and α-phase respectively based on x-ray diffraction results. Furthermore, ultralong CuPc nanowires up to several millimeters could be fabricated by TG-PVD without carrier gas, and they were well-aligned to form large-area CuPc nanowire crystal arrays by the Langmuir–Blodgett method. The nanostructure crystals showed unusual optical absorption spectra from the ultraviolet–visible to near-infrared range, which was explained by the diffraction and scattering caused by the wavelength-sized nanostructures. These CuPc nanostructure crystals show potential applications in organic electronic and optoelectronic devices.

The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm on Si (111) substrates was demonstrated. The employment of GaN film templates with flat surfaces (root mean square surface roughness of 0.84 nm), which were obtained using an AlN/GaN superlattice (SL) buffer on Si, contributed to the high-quality selective-area growth of nanocolumns using a thin Ti mask of 5 nm thickness by rf-plasma-assisted molecular beam epitaxy. Although the GaN template included a large number of dislocations (dislocation density ∼10¹¹ cm⁻²), the dislocation filtering effect of nanocolumns was enhanced with decreasing nanocolumn diameters (D). Systematic transmission electron microscopy (TEM) observation enabled us to explain the dependence of the dislocation propagation behavior in nanocolumns on the nanocolumn diameter for the first time. Plan-view TEM analysis was performed for nanocolumns with D = 120–324 nm by slicing the nanocolumns horizontally at a height of ∼300 nm above their bottoms and dislocation propagation through the nanocolumns was analyzed by the cross-sectional TEM observation of nanocolumns with D ∼ 200 nm. It was clarified that dislocations were effectively filtered in the bottom 300 nm region of the nanocolumns, the dislocation density of the nanocolumns decreased with decreasing D, and for narrow nanocolumns with D < 200 nm, dislocation-free crystals were obtained in the upper part of the nanocolumns. The dramatic improvement in the emission properties of GaN nanocolumns observed with decreasing diameter is discussed in relation to the decreased dislocation density. The laser action of InGaN/GaN-based nanocolumn arrays with a nanocolumn diameter of 170 nm and a period of 200 nm on Si under optical excitation was obtained with an emission wavelength of 407 nm. We also fabricated red-emitting InGaN-based nanocolumn light-emitting diodes on Si that operated at a wavelength of 652 nm, demonstrating vertical conduction through the AlN/GaN SL buffer to the Si substrate.

In this study, the supercapacitive properties of six new TiO₂ nanostructures—including nanodishes, three-layer nanosheets, ancient Chinese coins, single-layer nanosheets, hollow nanocubes, and commercial rutile TiO₂ are investigated mainly by cyclic voltammetry, chronopotentiometry, and electrochemical impedance spectroscopy. The results show that among them, the TiO₂ nanodishes have the highest discharging capacitance at 1792 mFg⁻¹, which is 6.4 and 1.5 times higher than that of TiO₂ single-layer nanosheets and commercial rutile TiO₂, respectively. We found that the electrochemical properties of the TiO₂ samples are predominated primarily by the high-energy facets exposed, instead of by the Brunauer–Emmett–Teller area. An important and previously unknown finding of our work is that the electrochemical properties of electrode materials can be improved by controlling the high-energy facets.

Diameter-modulated nanowires can be used to impart unique properties to nanowire-based devices. Here, diameter modulation along Au-seeded GaAs nanowires was achieved by varying the flux of the III and V precursors during growth. Furthermore, three different types of [111]B-oriented nanowires were observed to display distinct differences in diameter modulation, growth rate, and cross-sectional shape. These differences are attributed to the presence of multiple distinct Au–Ga seed particle phases at the growth temperature of 420 °C. We show that the diameter modulation behavior can be modified by the growth conditions during nanowire nucleation, including temperature, V/III ratio, substrate orientation, and seed particle size. These results demonstrate the general viability of flow-controlled diameter modulation for compound semiconductors and highlight both opportunities and challenges that can arise from using compound-forming alloys to seed nanowire growth.

Magnetic skyrmions are topologically protected nanoscale objects, which are promising building blocks for novel magnetic and spintronic devices. Here, we investigate the dynamics of a skyrmion driven by a spin wave in a magnetic nanowire. It is found that (i) the skyrmion is first accelerated and then decelerated exponentially; (ii) it can turn L-corners with both right and left turns; and (iii) it always turns left (right) when the skyrmion number is positive (negative) in the T- and Y-junctions. Our results will be the basis of skyrmionic devices driven by a spin wave.