Corrigendum: Self-induced growth of vertical GaN nanowires on silica (2015 Nanotechnology 27 135602)

In the published article, the statement referring to [17] on page 5 does not correspond to the exact content of Sobanska's publication and should read.

Sobanska et al [17] compared the nucleation of GaN NWs on crystalline sapphire and on amorphous alumina. These authors observed dense arrays of NWs on the amorphous surface, while a rough compact layer was formed on sapphire, i.e. the NW formation was more favourable on the amorphous layer. This result contrasts with our study where the crystalline order at the Si surface seems to help NW nucleation.

The correct reference [17] is:

Sobanska M, Klosek K, Borysiuk J, Kret S, Tchutchulashvili G, Gieraltowska S and Zytkiewicz Z R 2014 Enhanced catalyst-free nucleation of GaN nanowires on amorphous Al₂O₃ by plasma-assisted molecular beam epitaxy J. Appl. Phys. 115 043517