We have measured the ac complex resistivity in the
linear regime, as well as dc resistivity, for thick (100, 300 nm)
amorphous (a-)MoxSi1–x films at low temperatures
(T > 0.04 K) in constant fields B. The critical behavior
associated with the second-order transition has been observed
for both dc and ac resistivities, which is similar to that observed
for granular indium films. This is the first convincing evidence
for the vortex glass transition (VGT) in the homogeneously
disordered low-TC superconductors containing microscopic
pinning centers. We have found that the VGT persists down toT ∼ 0.1TC0 up to B ∼ 0.9BC2(0), where TC0 and BC2(0) are the
mean-field transition temperature and upper critical field atT = 0, respectively. At T → 0 the VGT line Bg(T) extrapolates
to a field below BC2(0), indicative of the presence of a T = 0
quantum-vortex-liquid phase in the region Bg(0) <B < BC2(0).
For thin (4 nm) films the (T = 0) field-driven superconductor–insulator transition takes place at BC. We have not
obtained evidence of the metallic quantum liquid phase belowBC, while in B > BC an anomalous negative magnetoresistance
(MR) suggesting the presence of the localized Cooper pairs has
been observed. The negative MRis commonly observed for thin
films; however, for thick films the MR is always positive. This
means that the two-dimensionality plays an important role in
the appearance of the negative MR (or localized Cooper pairs).
The negative MR is no longer visible as the field is applied
parallel to the film surface, consistent with the view that mobile
vortices, as well as localized Cooper pairs, are present inB > BC.