Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance

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Published 20 April 2010 Copyright (c) 2010 The Japan Society of Applied Physics
, , Citation Daisuke Hori et al 2010 Jpn. J. Appl. Phys. 49 04DC15 DOI 10.1143/JJAP.49.04DC15

1347-4065/49/4S/04DC15

Abstract

The high-speed switching performance of a complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) inverters is analyzed. It is found that the propagation delay of an inverter can no lomger be described by a DC-current-based estimate, but that the charging/discharging current is essential for the propagation delay prediction under high-frequency operation.

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10.1143/JJAP.49.04DC15