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Erratum: "Atomic Layer Deposited Co(W) Film as a Single-Layered Barrier/Liner for Next-Generation Cu-Interconnects"

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Published 18 July 2014 • © 2014 The Japan Society of Applied Physics
, , Citation Hideharu Shimizu et al 2014 Jpn. J. Appl. Phys. 53 089202 DOI 10.7567/JJAP.53.089202

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This is a correction for 2012 Jpn. J. Appl. Phys. 51 05EB02

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Hideharu.Shimizu@tn-sanso.co.jp

Author affiliations

1 Taiyo-Nippon Sanso Corporation, Tsukuba, Ibaraki 300-2611, Japan

2 Department of Material Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

Dates

  1. Received 25 June 2014
  2. Accepted 27 June 2014
  3. Published

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We made a mistake in evaluating the W concentration in Co(W) films by XPS in our published paper. The W concentrations of Co(W) films mentioned as 10 and 20 at. % in the published paper, which were evaluated by XPS, should all be replaced by 7 and 14 at. %, respectively. Figures 3, 4, and 7 should be replaced by the figures shown below.

Fig. 3.

Fig. 3. 

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Fig. 4.

Fig. 4. 

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Fig. 7.

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Fig. 7.

Fig. 7. 

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Cu concentration profiles are not affected by such modification. Therefore, the conclusion that W addition improved barrier property of Co(W) films is not altered after the correction in the W concentration values.

10.7567/JJAP.53.089202