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Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 μm

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Published 17 December 2009 Published under licence by IOP Publishing Ltd
, , Focus on Advanced Semiconductor Heterostructures for Optoelectronics Citation Alexander Bachmann et al 2009 New J. Phys. 11 125014 DOI 10.1088/1367-2630/11/12/125014

1367-2630/11/12/125014

Abstract

Vertical-cavity surface-emitting lasers (VCSELs) are perfect light sources for spectroscopic applications, where properties such as continuous-wave (cw) operation, single-mode emission, high lifetime and often low power consumption are crucial. For applications such as tunable diode laser absorption spectroscopy (TDLAS), there is a growing interest in laser devices emitting in the near- to mid-infrared wavelength range, where many environmentally and technologically important gases show strong absorption lines. The (AlGaIn)(AsSb) material system based on GaSb is the material of choice for covering the 2.0–3.3 μm range. In this paper, we report on electrically pumped single-mode VCSELs with emission wavelengths of 2.4 and 2.6 μm, operating cw at room temperature and beyond. By (electro-) thermal tuning, the emission wavelength can be tuned mode-hop free over a range of several nanometers. In addition, low threshold currents of several milliamperes promise mobile application. In the devices, a structured buried tunnel junction with subsequent overgrowth has been used in order to achieve efficient current confinement, reduced optical losses and increased electrical conductivity. Furthermore, strong optical confinement is introduced in the lasers due to laterally differing cavity lengths.

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10.1088/1367-2630/11/12/125014