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Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures

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Published 1 April 2010 Published under licence by IOP Publishing Ltd
, , Citation C Rössler et al 2010 New J. Phys. 12 043007 DOI 10.1088/1367-2630/12/4/043007

1367-2630/12/4/043007

Abstract

In this work, we investigate high-mobility two-dimensional electron gases in AlxGa1-xAs heterostructures by employing Schottky-gate-dependent measurements of the samples' electron density and mobility. Surprisingly, we found that two different sample configurations can be set in situ with mobilities differing by a factor of more than two in a wide range of densities. This observation is discussed in the context of charge redistributions between the doping layers and is relevant for the design of future gateable high-mobility electron gases.

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