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The Aharonov–Bohm effect in a side-gated graphene ring

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Published 30 April 2010 Published under licence by IOP Publishing Ltd
, , Citation Magdalena Huefner et al 2010 New J. Phys. 12 043054DOI 10.1088/1367-2630/12/4/043054

1367-2630/12/4/043054

Abstract

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov–Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov–Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

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10.1088/1367-2630/12/4/043054
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