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Dangling-bond charge qubit on a silicon surface

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Published 9 August 2010 Published under licence by IOP Publishing Ltd
, , Citation Lucian Livadaru et al 2010 New J. Phys. 12 083018 DOI 10.1088/1367-2630/12/8/083018

This article is corrected by 2017 New J. Phys. 19 119501

1367-2630/12/8/083018

Abstract

Two closely spaced dangling bonds (DBs) positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the coherent dynamics of this qubit, its extremely high tunneling rate ∼1014 s-1 greatly exceeds the expected decoherence rates for a silicon-based system, thereby overcoming a critical obstacle of charge qubit quantum computing (QC). We investigate possible configurations of DB qubits for QC devices. A first-order analysis of coherent dynamics of DBs shows promise in this respect.

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