A continuous-wave Pr:YAlO3 microchip laser operation at 662 nm is reported. Microchip resonator was formed by dielectric mirrors directly coated on the Pr:YAlO3 crystal front surfaces. GaN laser diode providing up to 1 W of output power at ∼ 448 nm was used as a pumping source. Output characteristics were investigated at different active medium temperature within the range of 11 – 35°C. The best result 27.4 mW of output power has been reached at 11°C at 680 mW of pumping power. The slope efficiency related to the incident pumping power was ∼ 9%.