Abstract
Palladium atoms have been deposited onto graphene where they catalyse etching processes in conjunction with the e-beam, during/after which they reside at the edges of the holes, which have formed in the graphene. Energy filtered imaging reveals that the low loss feature at 2-4 eV constituting the shoulder of the graphene n-plasmon, is up to 10 times enhanced at Pd-decorated graphene edges compared to clean monolayer graphene, rendering it a useful feature for electric field enhancement applications in the optical regime
Export citation and abstract BibTeX RIS
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.